Interfacial chemical bond engineering on a Te semiconductor to weaken carrier–phonon coupling to boost thermoelectric conversion performance
The thermoelectric performance of Te-based semiconductors can be boosted by utilizing interfacial chemical-bonding heterogeneity without doping the matrix lattice. The dual p-p type heterointerfaces obtained through introducing metavalently bonded Bi<sub>2</sub>Te<sub>3</sub> and covalently bonded B into Te enable obvious carrier-phonon decoupling.
Authors
- Decheng An (ORCID: https://orcid.org/0000-0001-5576-2879)
- Zhiyong Si (ORCID: https://orcid.org/0000-0001-9280-0491)
- Min Liu (ORCID: https://orcid.org/0000-0003-2542-2333)
- Yue Wang (ORCID: https://orcid.org/0000-0003-0098-5359)
- Xianming Zhang (ORCID: https://orcid.org/0000-0002-1480-7222)
- Wutao Yang
Institutions
- Taiyuan University of Technology (CN)
Publication Details
- Journal
- Chemical Communications
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5cc02836a
- Citations
- 1
- Primary Topic
- Advanced Thermoelectric Materials and Devices
- Type
- article
- Field-Weighted Citation Impact
- 0.52
Funders
- National Natural Science Foundation of China