400V SiC MOSFET empowering three-level topologies for highly efficient applications from motor-drives to AI

• the world’s first 400 V SiC MOSFET technology and its properties and benefits are introduced • the new 400 V devices are perfect matches for use in three-level topologies • the devices show very clean switching waveforms, and are capable to switch with dv/dt of 120 V/ns • test results in a 20 kW three-level ANPC topology for industrial applications reveal clear advantages over a common B6 topology with 650 V devices for switching frequencies of 30 kHz and beyond • the efficiency in an interleaved three-level flying-cap totem-pole PFC reaches 99.5 %, translating to 25 % lower losses as for a two-level totem-pole PFC with 650 V devices The introduction of 400 V SiC MOSFET technology bridges the voltage range gap between 200 V medium-voltage MOSFETs and 600 V super-junction MOSFETs. This technology is characterized by low switching losses and low on-state resistance, making it suitable for 2-level topologies in 120 VAC or 300 VDC systems or 3-level topologies with typical input voltages ranging from 180 VAC to 350 VAC or 400 VDC to 600 VDC. The technology concept is presented, and its efficiency and power density gains are demonstrated through measurements on test boards representing a 3-level ANPC general purpose inverter and a 3-level FC PFC for highly-efficient power supplies.