A high speed response Nafion-based non-volatile RF switch

Radio frequency (RF) switches are pivotal components in modern wireless communication systems, playing a crucial role in 5 G, Internet of Things (IoT), and satellite communications. Non-volatile devices that offer zero static power consumption and miniaturization present a promising avenue for the fabrication of RF switches through resistive state switching using memristors. Nafion, a fluorosulphonated polytetrafluoroethylene copolymer, served as the dielectric in this study, enabling the preparation of Nafion-based non-volatile RF switches via a micro-nano process. The fabricated Nafion-based non-volatile RF switch exhibits a low insertion loss of 0.68 dB and an isolation of −11.55 dB at 43.5 GHz. It also has a nanosecond switching response time of 45 ns turn-on process, a critical performance metric for non-volatile RF devices. In addition, this device is switched by DC pulses, which significantly reduce the operational energy consumption of the RF switch. This advancement facilitates the development of reconfigurable wireless communication systems with high frequency.