Optically pumped semiconductor laser with intracavity stimulated Raman scattering for tunable output between 1160 and 1220nm

An efficient tunable laser between 1160 and 1220 nm is developed using intracavity stimulated Raman scattering (SRS) in an optically pumped semiconductor laser based on GaInAs/GaAs QWs near 1070 nm. The efficiency of intracavity SRS is elevated by designing a KGW crystal with high-reflection coating to act as a reflective mirror. The resonant bandwidth of the cavity can lead to dual-wavelength operation by generating Stokes lines of the internal vibration mode at 901 cm −1 and the external vibrational mode at 209 cm −1 in cascade for a fundamental wavelength shorter than 1069 nm. For a fundamental wavelength longer than 1070 nm, the single Stokes field is generated from the mode of 901 cm −1 . The maximum output powers can be higher than 3 W at a pump power of 30 W for the main tuning range. The output powers for the dual wavelengths at 1178 nm and 1207 nm can be nearly balanced for the fundamental wavelength at 1065 nm.