Metal–Organic Chemical Vapor Deposition of MgSiN₂ Thin Films

Orthorhombic-structured II–IV nitrides provide a promising opportunity to expand the material platform while maintaining compatibility with the wurtzite crystal structure of the traditional III-nitride material system. Among them, MgSiN2 stands out due to its close compatibility with GaN and AlN and its theoretically predicted ultrawide direct band gap of 6.28 eV. In this work, the growth of MgSiN2 thin films on GaN-on-sapphire and c-plane sapphire substrates was investigated by using metal–organic chemical vapor deposition (MOCVD). MOCVD growth conditions were correlated with film quality and crystallinity for samples grown on GaN-on-sapphire substrates. The effects of Mg:Si precursor molar flow rate ratios and growth pressure at two different temperatures, 745 and 850 °C, were studied comprehensively. High-resolution scanning transmission electron microscopy (STEM) imaging confirmed the formation of high-quality single-crystal MgSiN2 films. Optical band gap extraction from transmittance measurements yielded direct band gap values ranging from 6.13 eV to 6.27 eV for samples grown under various conditions, confirming the realization of an ultrawide-band-gap, III-nitride-compatible, II–IV-nitride material.