A Review: The Response of Fluorine Implantation at Poly-Si Gate

Abstract This review paper offers a comprehensive overview of Fluorine implantation’s impact on Poly-Si/SiO 2 interface at silicon PMOS devices. The study reveals that Fluorine facilitates bond strain relaxation at the SiO 2 -Si interface and highlight Fluorine implantation’s potential to enhance electrical characteristics such as low junction leakage, low sheet resistance and reliability stress in NBTI/TDDB. However, the study also indicates that the implantation doses of Fluorine atoms need to be controlled, as low doses decrease interface trap density while higher doses have the opposite effect. Moreover, the review paper also proposes future directions for optimizing Fluorine implant conditions to understand the Fluorine implantation which contribute to the development of more advanced and efficient nanoelectronics devices.