Silicon Carbide MOSFET based Inverter for Smart Power Switch

Abstract This research investigates the comparative analysis of Silicon Carbide (SiC) and Silicon (Si) MOSFET based inverter focusing on switching losses, conduction losses, and power losses. While Si has been the traditional semiconductor material, it has limitations in power losses which affecting the efficiency and reliability of the system. Si MOSFETs face challenges such as slow switching speeds and inherent conduction losses, leading to a significant power loss. In contrast, SiC is a promising alternative due to its superior physical properties including a higher breakdown electric field strength, faster switching speeds and lower on-resistance. These characteristics result in reduced switching losses, conduction losses and overall power loss making SiC well-suited for high-frequency applications. This study uses Simscape and Simulink in MATLAB to conduct a detailed comparative analysis of SiC and Si MOSFET based inverters. The research provides valuable insights into the advantages of SiC over Si MOSFET in power electronics applications. The findings of this research paper contribute to a deeper understanding of MOSFET materials in inverter environments and highlight the potential of SiC technology to drive advancements in various industries, including automotive, renewable energy and power distribution.