A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability

A novel approach is proposed for the fabrication of planar nanoscale vacuum electronic devices (NVEDs), combining chemical mechanical polishing (CMP) and selective etching techniques. Utilizing this method, we successfully fabricated planar NVEDs featuring uniform vacuum channels as narrow as 14 nm. Electrical measurements under atmospheric conditions demonstrated excellent field emission characteristics and relatively low turn-on voltage of 1.8 V. Furthermore, temperature-dependent measurements were conducted to investigate the device’s thermal behavior thoroughly. The precise controllability of the channel dimensions and high compatibility with conventional CMOS processes make this method a competitive option for the fabrication of NVEDs.

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Publication Details

Journal
IEEE Electron Device Letters
Published
2025-06-16
DOI
https://doi.org/10.1109/led.2025.3580064
Citations
1
Primary Topic
Advanced MEMS and NEMS Technologies
Type
article
Field-Weighted Citation Impact
0.73

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article

A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability

Jin Chen, Wenjie Yu, Qiang Liu, Yuxin Liu
1 citations
IEEE Electron Device Letters
Advanced MEMS and NEMS Technologies
0.73
article

A Novel Approach for Large-Scale Fabrication of Nanoscale Vacuum Electronic Devices With High Compatibility and Controllability

Jin Chen, Wenjie Yu, Qiang Liu, Yuxin Liu
article en
1 citations

Abstract

A novel approach is proposed for the fabrication of planar nanoscale vacuum electronic devices (NVEDs), combining chemical mechanical polishing (CMP) and selective etching techniques. Utilizing this method, we successfully fabricated planar NVEDs featuring uniform vacuum channels as narrow as 14 nm. Electrical measurements under atmospheric conditions demonstrated excellent field emission characteristics and relatively low turn-on voltage of 1.8 V. Furthermore, temperature-dependent measurements were conducted to investigate the device’s thermal behavior thoroughly. The precise controllability of the channel dimensions and high compatibility with conventional CMOS processes make this method a competitive option for the fabrication of NVEDs.

IEEE Electron Device LettersVol. 46(8)
Chinese Academy of Sciences (CN), Shanghai Institute of Microsystem and Information Technology (CN)
National Natural Science Foundation of China
Affordable and clean energy
Openalex Percentile: Top 27%
Advanced MEMS and NEMS Technologies
0.73
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