Exploration of alternative gate dielectric materials for RADFET sensors
RADFETs are a low-cost option for implementing a radiation sensor. The characteristics of their gate dielectric material is the key element due to its sensitivity to ionizing radiation. We have studied alternative (high-K and organic) materials to the conventional SiO 2 -based gate dielectric in order to improve the device performance. Electrical characterization in irradiated samples has been carried on to study the radiation response of each material to low levels of ionizing radiation. The HfO 2 -based samples have a much higher sensitivity per unit thickness than the SiO 2 -based ones. High-K based RADFETs show promising performance as gate dielectrics for future silicon based radiation sensors.
Authors
- E. Amat (ORCID: https://orcid.org/0000-0001-9214-0331)
- Carme Martínez‐Domingo (ORCID: https://orcid.org/0000-0002-1897-5362)
- Marta Mas‐Torrent (ORCID: https://orcid.org/0000-0002-1586-005X)
- Magali Lozano (ORCID: https://orcid.org/0000-0003-0220-2661)
- C. Fleta (ORCID: https://orcid.org/0000-0002-6591-6744)
Institutions
- Institut de Ciència de Materials de Barcelona (ES)
- Institut de Microelectrònica de Barcelona (ES)
Publication Details
- Journal
- Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms
- Published
- 2025-06-16
- DOI
- https://doi.org/10.1016/j.nimb.2025.165775
- Citations
- 2
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- European Commission
- Horizon 2020 Framework Programme
- European Regional Development Fund
- Agencia Estatal de Investigación