Enhancement of gamma radiation sensitivity in tungsten-doped indium oxide thin films

This paper reports on enhancement of gamma sensitivity in indium oxide doped with tungsten. Using the spray pyrolysis process, the thin films are deposited on a heated glass substrate. Gamma doses ranging from 25, 50, 100 and 200 Gy were utilized. According to XRD analysis, the films showed a single-phase and polycrystalline cubic structure with (400) preferred orientation. FESEM was used to conduct morphological studies. The cubic crystalline structure of the deposits is further supported by the micro-Raman measurement. After irradiation, it was discovered that the optical bandgap shrank. The dominant process of defect generation is responsible for the rise in the photoluminescence peak intensities following gamma exposure. The irradiated film was studied for thermoluminescence and deconvolution of the experimental glow curve indicated the emergence of a new peak corresponding to the dopant along with the primary peak around 230 0 C. The elements contained in the sample are identified using XPS. The oxygen vacancies produced during gamma exposure determine the structural, optical, and electrical characteristics. The estimated sensitivities for applied voltages ranging from 1 V to 5 V fall within the range of 92.3 – 467.9 mA/cm 2 /Gy, exceeding both pristine and previously reported values. • The oxygen vacancies produced during gamma exposure drive the modifications in structural and electrical characteristics • Enhancement of gamma sensitivity in indium oxide thin film doped with tungsten • Maximum gamma sensitivity was found to be 467.9 mA/cm 2 /Gy • Tungsten-doped films exhibited superior gamma sensitivity than any other reported value