Structural variability of gamma Ni-silicides

Studying the Ni-Si system, we confirmed the only known Ni 31 Si 12 ( S12 ) structure and in addition several new gamma modifications were also observed. Our TEM/STEM studies of gamma Ni-silicides revealed crystal structures with different atomic arrangements and even varying c cell parameters (~6 Å, ~12 Å, ~18 Å, ~36 Å). Three of them were determined and named S6a , S6b and S18 . The nomenclature of S6 , S12 and S18 refers to their c cell parameters which are multiples of ~6 Å. Nanoscale variability was also observed in the gamma Ni-silicides, where nanoscale variability was the outcome of stacking, inversion, twinning and intimate (001) intergrowths of the different modifications. • Within the γ-Ni-Si system, several new crystal structures have been observed by TEM. • In addition to the known S12 structure, S6a, S6b and S18 modifications have been identified. • All modifications of γ-Ni-silicides are created by varying the basic units S6a and S6b

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Publication Details

Journal
Journal of Alloys and Compounds
Published
2025-06-16
DOI
https://doi.org/10.1016/j.jallcom.2025.181554
Primary Topic
Semiconductor materials and interfaces
Type
article
Field-Weighted Citation Impact
0.00

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article

Structural variability of gamma Ni-silicides

Zsolt Fogarassy, György Sáfrán, Erzsébet Dódony, Péter Pekker et al.
4 links
Journal of Alloys and Compounds
Semiconductor materials and interfaces
article

Structural variability of gamma Ni-silicides

Zsolt Fogarassy, György Sáfrán, Erzsébet Dódony, Péter Pekker, István Dódony
article en

Abstract

Studying the Ni-Si system, we confirmed the only known Ni 31 Si 12 ( S12 ) structure and in addition several new gamma modifications were also observed. Our TEM/STEM studies of gamma Ni-silicides revealed crystal structures with different atomic arrangements and even varying c cell parameters (~6 Å, ~12 Å, ~18 Å, ~36 Å). Three of them were determined and named S6a , S6b and S18 . The nomenclature of S6 , S12 and S18 refers to their c cell parameters which are multiples of ~6 Å. Nanoscale variability was also observed in the gamma Ni-silicides, where nanoscale variability was the outcome of stacking, inversion, twinning and intimate (001) intergrowths of the different modifications. • Within the γ-Ni-Si system, several new crystal structures have been observed by TEM. • In addition to the known S12 structure, S6a, S6b and S18 modifications have been identified. • All modifications of γ-Ni-silicides are created by varying the basic units S6a and S6b

Journal of Alloys and CompoundsVol. 1036
Eötvös Loránd University (HU), University of Pannonia (HU), Institute for Technical Physics and Materials Science (HU), HUN-REN Centre for Energy Research (HU)
Nemzeti Kutatási, Fejlesztési és Innovaciós Alap
Openalex Percentile: Top 90%
Semiconductor materials and interfaces
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