Evaluation and Optimization of the Packaging Parameter Changes of GaN HEMT Through Electrical-Thermal-Structural and Electromagnetic Analysis

Gallium Nitride (GaN)-based High Electron Mobility Transistors (HEMTs) are regarded as key devices for next-generation high-power and high-frequency applications. The performance of these fast-switching devices is significantly influenced by packaging, which affects their electrical, thermal, and mechanical behavior. In this study, a full-factorial Design of Experiments (DOE) approach was employed in combination with Finite Element Analysis (FEA) to evaluate the effects of key packaging parameters, including wire material, wire diameter, and solder joint height. Electro-thermal-structural simulations and electromagnetic analyses were conducted to assess the influence of these variables. Statistical evaluations using Multivariate Analysis of Variance (MANOVA) and Response Surface Modeling (RSM) were also performed. The optimized design, which incorporated thick gold wires (0.05 mm diameter) and a low solder joint height (0.02 mm), effectively minimized thermal stress while enhancing electrical performance, achieving a total desirability score of 0.67. The results of this study are expected to contribute to improved reliability and performance in GaN HEMT packaging.