Analysis of Switching Characteristics of TO-247-3L and TO-247-4L SiC MOSFETs Based on Chip Size and Temperature Variations

Silicon-Carbide Metal-Oxide-Semiconductor Field-Effect Transistors (SiC MOSFETs) are crucial for next-generation power conversion. Conventional SiC MOSFETs primarily utilize a 3-lead package, which is simple in structure and cost-effective. However, the common source inductance of the package increases switching losses. To address this issue, a 4-lead package has been introduced. Nevertheless, research on its switching characteristics is still limited. This study compares the switching characteristics of TO-247-3L and TO-247-4L SiC MOSFETs with identical chip sizes through double pulse tests. Moreover, switching losses under different temperature conditions were analyzed for various chip sizes of TO-247-3L and TO-247-4L SiC MOSFETs. The findings indicate that switching losses of TO-247-4L SiC MOSFETs were lower than TO-247-3L SiC MOSFETs. Additionally, turn-off energy losses increased with temperature, while turn-on energy losses varied depending on chip sizes and package types.