Design of a 1.2 kV SiC MOSFET Utilizing an H-Shaped Poly-Si Gate
A 1.2 kV SiC H-shaped poly-Si gate MOSFET (HPG MOSFET) structure was proposed to effectively reduce switching loss without compromising static device characteristics. The structure features a locally etched poly-Si gate electrode, and its performance was analyzed by evaluating the specific on-resistance (R<sub>on,sp</sub>), gate-to-drain charge (Q<sub>gd,sp</sub>), and maximum oxide electric field (E<sub>ox,max</sub>) at the poly-Si gate corner according to the etched area. Under optimized conditions, the proposed HPG MOSFETs achieved a significant reduction in Q<sub>gd,sp</sub> with only a negligible increase in R<sub>on,sp</sub> compared to conventional SiC planar MOSFETs. Additionally, Eox,max at the gate corner remained below 3 MV/cm. These findings demonstrate that the 1.2 kV SiC HPG MOSFET can significantly enhance energy efficiency.
Authors
- Sumin Park
- Hyowon Yoon (ORCID: https://orcid.org/0000-0002-9904-7102)
- Gyuhyeok Kang
- Ogyun Seok (ORCID: https://orcid.org/0000-0002-8585-5002)
- Sangyeob Kim (ORCID: https://orcid.org/0000-0002-1783-5296)
- Dusan Baek
Publication Details
- Journal
- The Transactions of The Korean Institute of Electrical Engineers
- Published
- 2025-05-31
- DOI
- https://doi.org/10.5370/kiee.2025.74.5.905
- Primary Topic
- Silicon Carbide Semiconductor Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00