Gate-driven band modulation hyperdoping for high-performance p-type 2D semiconductor transistors
Tailoring carrier density in atomically thin two-dimensional (2D) semiconductors is challenging because of the inherently limited physical space for incorporating charge dopants. Here, we report that interlayer charge-transfer doping in type III van der Waals heterostructures can be greatly modulated by an external gate to realize a hyperdoping effect. Systematic gated-Hall measurements revealed that the modulated carrier density is about five times that of the gate capacitive charge, achieving an ultrahigh 2D hole density of 1.49 × 10<sup>14</sup> per square centimeter, far exceeding the maximum possible electrostatic doping limit imposed by typical dielectric breakdown. The highly efficient hole-doping enables high-performance p-type 2D transistors with an ultralow contact resistance of ~0.041 kilohm micrometers and a record-high ON-state current density of ~2.30 milliamperes per micrometer.
Authors
- Bei Zhao (ORCID: https://orcid.org/0000-0001-9562-5393)
- Xidong Duan (ORCID: https://orcid.org/0000-0002-4951-901X)
- Zucheng Zhang
- Xiangfeng Duan (ORCID: https://orcid.org/0000-0002-4321-6288)
- Lin Miao (ORCID: https://orcid.org/0000-0001-6236-6356)
- Zhao Chen (ORCID: https://orcid.org/0000-0002-2597-5379)
- Zhenhua Ni (ORCID: https://orcid.org/0000-0002-6316-2256)
- Dingli Guo (ORCID: https://orcid.org/0000-0002-3355-0266)
- Junpeng Lü (ORCID: https://orcid.org/0000-0002-7099-3162)
- Tiancheng Gu (ORCID: https://orcid.org/0009-0008-3303-1141)
- Jia Li (ORCID: https://orcid.org/0000-0002-0219-2443)
- Kun He (ORCID: https://orcid.org/0009-0004-3083-7773)
- Junqing Xu (ORCID: https://orcid.org/0000-0001-9611-8166)
- Guiming He (ORCID: https://orcid.org/0009-0004-4035-9437)
- Quan Ren
- Ping Lü (ORCID: https://orcid.org/0009-0001-1284-4687)
Institutions
- University of California, Los Angeles (US)
- Hefei University of Technology (CN)
- Hunan University (CN)
- Ministry of Education (BD)
- Southeast University (CN)
Publication Details
- Journal
- Science
- Published
- 2025-06-12
- DOI
- https://doi.org/10.1126/science.adp8444
- Citations
- 27
- Primary Topic
- 2D Materials and Applications
- Type
- article
- Field-Weighted Citation Impact
- 13.98