High-Performance Broadband Integrated Detection System for Multifunctional Applications

In the digital era, photodetectors have become indispensable components in optical communication, imaging, and artificial intelligence, driven by the integration of multidisciplinary technologies and the expanding application scenarios. However, traditional photodetectors, constrained by fixed-bandgap semiconductors, falter in delivering broadband sensitivity and miniaturized integration. While narrow-bandgap two-dimensional (2D) materials offer promising solutions for broad-spectrum detection due to their exceptional spectral absorption capabilities, they are still hindered by excessive dark currents (>10<sup>-5</sup> A) and noise-induced signal ambiguity, which degrade photosensitivity (<i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub>) and limit real-world utility. Here, we transcend these limitations through a monolithically integrated architecture that synergizes a Ta<sub>2</sub>NiSe<sub>5</sub> photodetector with a MoS<sub>2</sub> field-effect transistor (FET) amplification unit, which weakens the noise effect while maintaining its unparalleled photoconductive efficiency. The Ta<sub>2</sub>NiSe<sub>5</sub> photodetector exhibits a broadband photoresponse in the 635-1550 nm range, with a maximum responsivity of 83.5 A/W and detectivity of 2.1 × 10<sup>10</sup> Jones, while the photosensitivity is amplified up to 3.7 × 10<sup>3</sup> with a 3200-fold enhancement under 1550 nm illumination by integrating the FET as an amplification unit. This breakthrough enables high-contrast single-pixel imaging with 99% neural network recognition accuracy, outperforming bare Ta<sub>2</sub>NiSe<sub>5</sub> detectors in training efficiency. Based on the above performance optimization, we demonstrated signal-coded transmission and high-fidelity signal reproduction in fiber-optic communication bands and executed reconfigurable OR/AND logic operations via gate voltage and optical inputs, demonstrating dual-field (optical/electrical) programmability. These results indicate that the system has significant potential for secure optical communications, digital circuits, and artificial vision applications and provides a promising technological path for developing high-performance and multifunctional on-chip optoelectronic systems.

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Publication Details

Journal
ACS Nano
Published
2025-06-13
DOI
https://doi.org/10.1021/acsnano.5c06392
Citations
6
Primary Topic
Radar Systems and Signal Processing
Type
article
Field-Weighted Citation Impact
29.96

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article

High-Performance Broadband Integrated Detection System for Multifunctional Applications

Liujian Qi, Mingxiu Liu, Dabing Li, Yaru Shi et al.
6 citations
ACS Nano
Radar Systems and Signal Processing
29.96
article

High-Performance Broadband Integrated Detection System for Multifunctional Applications

Liujian Qi, Mingxiu Liu, Dabing Li, Yaru Shi, Shaojuan Li, Zhilin Liu, Fan Tan, Chunlu Chang, Yuting Zou, Nan Zhang, Xingyu Zhao
article en
6 citations

Abstract

In the digital era, photodetectors have become indispensable components in optical communication, imaging, and artificial intelligence, driven by the integration of multidisciplinary technologies and the expanding application scenarios. However, traditional photodetectors, constrained by fixed-bandgap semiconductors, falter in delivering broadband sensitivity and miniaturized integration. While narrow-bandgap two-dimensional (2D) materials offer promising solutions for broad-spectrum detection due to their exceptional spectral absorption capabilities, they are still hindered by excessive dark currents (>10<sup>-5</sup> A) and noise-induced signal ambiguity, which degrade photosensitivity (<i>I</i><sub>light</sub>/<i>I</i><sub>dark</sub>) and limit real-world utility. Here, we transcend these limitations through a monolithically integrated architecture that synergizes a Ta<sub>2</sub>NiSe<sub>5</sub> photodetector with a MoS<sub>2</sub> field-effect transistor (FET) amplification unit, which weakens the noise effect while maintaining its unparalleled photoconductive efficiency. The Ta<sub>2</sub>NiSe<sub>5</sub> photodetector exhibits a broadband photoresponse in the 635-1550 nm range, with a maximum responsivity of 83.5 A/W and detectivity of 2.1 × 10<sup>10</sup> Jones, while the photosensitivity is amplified up to 3.7 × 10<sup>3</sup> with a 3200-fold enhancement under 1550 nm illumination by integrating the FET as an amplification unit. This breakthrough enables high-contrast single-pixel imaging with 99% neural network recognition accuracy, outperforming bare Ta<sub>2</sub>NiSe<sub>5</sub> detectors in training efficiency. Based on the above performance optimization, we demonstrated signal-coded transmission and high-fidelity signal reproduction in fiber-optic communication bands and executed reconfigurable OR/AND logic operations via gate voltage and optical inputs, demonstrating dual-field (optical/electrical) programmability. These results indicate that the system has significant potential for secure optical communications, digital circuits, and artificial vision applications and provides a promising technological path for developing high-performance and multifunctional on-chip optoelectronic systems.

ACS NanoVol. 19(24)
Chinese Academy of Sciences (CN), Changchun Institute of Optics, Fine Mechanics and Physics (CN), University of Chinese Academy of Sciences (CN)
Natural Science Foundation of Jilin Province, National Natural Science Foundation of China, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, National Key Research and Development Program of China
Openalex Percentile: Top 1%
Radar Systems and Signal Processing
29.96
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