Medusa 84 SiH - A novel high selectivity electron beam resist for diamond quantum technologies

Abstract We investigate the novel electron beam resist Medusa 84 SiH by Allresist GmbH (Germany) for nanostructuring of single crystal diamond and its effects on the spin properties of nitrogen vacancy (NV) centers in nanopillars as prototypes for photonic structures. We find contrast curves comparable to previously employed resists (Hydrogen silsequioxane FOx). We present a selectivity for diamond etching of 11 to 12. Using an adhesion-promoting silicon interlayer potentially enables fabrication yields of up to 96%. We measure $$T_2$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:msub> <mml:mi>T</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> times of up to $$\sim$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mo>∼</mml:mo> </mml:math> 25 $$\mu$$ <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"> <mml:mi>μ</mml:mi> </mml:math> s before and after processing, demonstrating that the manufactured structures are usable for diamond-based quantum sensing. Graphical abstract