A study on the effect of oxygen on graphene field effect transistor under different pressures

Abstract This study focuses on the influence of air pressure on the total dose effect of graphene field-effect transistors. Experiments show that in the atmospheric pressure environment, after GFET is exposed to 60Co-γ radiation, its performance deteriorates significantly, with a threshold voltage offset of 0.66 V, while in the low-pressure environment, the offset is only 0.12 V, indicating that atmospheric pressure will aggravate the radiation damage. In addition, the low-frequency noise characteristics after atmospheric pressure irradiation change significantly. First-principles calculations have revealed the microscopic mechanism of en-hanced irradiation damage in the atmospheric environment: ozone radiated by 60Co-γ un-dergoes a large amount of charge transfer (0.29 e-) on the surface of graphene. Theoretical and experimental evidence indicates that the atmospheric ozone produced by 60Co-γ radiation promotes the adsorption of oxygen and accelerates the degradation of performance. This work provides assistance for the highly reliable application of GFET in the space radiation environment.