Visible-to-infrared photoabsorption in supermolecule-induced Turing-structured perovskite hybrid semiconductors

An emerging family of metal-halide perovskite semiconductors is highly attractive for optoelectronic applications because of their tunable light absorption, long-lived photogenerated carriers, and high defect tolerance. However, their inherent bandgaps limiting the photoabsorption below 1000 nanometers greatly constrain the further development of these materials and their optoelectronic devices. Here, we reported a straightforward strategy to achieving visible-to-infrared photoabsorption covering 630 to 2000 nanometers in inorganic perovskites by incorporating supramolecular crown ethers. Crown ethers enable supramolecular host-guest complexation and the formation of self-organizing Turing structures composed of original perovskites and supramolecular hybrid crystals. The visible-to-infrared photoabsorption is attributed to the interphase electron transitions in the Turing-structured perovskite hybrid matter system. Such visible-to-infrared photoabsorption is successfully translated into a photoelectronic response in an interdigitated photodetector. Our research extends the light absorption and detection capabilities of the perovskite hybrid semiconductors into the infrared region.