Gate-Controlled Three-Terminal ZnO Nanoparticle Optoelectronic Synaptic Devices for In-Sensor Neuromorphic Memory Applications

This study reports a gate-tunable three-terminal optoelectronic synaptic device based on an Al/ZnO nanoparticles (NPs)/SiO₂/Si structure for neuromorphic in-sensor memory applications. The ZnO NP film, fabricated via spin coating, exhibited strong UV-induced excitatory post-synaptic current (EPSC) responses that were modulated by gate voltage through charge injection across the SiO₂ dielectric rather than by conventional field effect. Optical stimulation enabled short-term synaptic plasticity, with paired-pulse facilitation (PPF) values reaching 185% at a gate voltage of -5.0 V and decreasing to 180% at +5.0 V, confirming gate-dependent modulation of synaptic weight. Repeated stimulation enhanced learning efficiency and memory retention, as demonstrated by reduced pulse numbers for relearning and slower EPSC decay. Wickelgren's power law analysis further revealed a decrease in the forgetting rate under negative gate bias, indicating improved long-term memory characteristics. A 3 × 3 synaptic device array visualized visual memory formation through EPSC-based color mapping, with darker intensities and slower fading observed under -5.0 V bias. These results highlight the critical role of gate-voltage-induced charge injection through the SiO₂ dielectric in controlling optical potentiation and electrical depression, establishing ZnO NP-based optoelectronic synaptic devices as promising platforms for energy-efficient, light-driven neuromorphic computing.