Lithographic performances of aryl sulfonate ester-modified polystyrenes as nonchemically amplified resists
n-CARs based on aryl sulfonate ester-functionalized polystyrenes gave an impressive 18 nm L/S and 10 nm L/4S EBL patterns, highlighting the effect of substituents on the lithographic performance of the n-CARs.
Authors
- Jun Zhao (ORCID: https://orcid.org/0000-0003-0128-2081)
- Xudong Guo (ORCID: https://orcid.org/0000-0002-2012-4399)
- Yi Zeng (ORCID: https://orcid.org/0000-0003-0694-1795)
- Peng Lian (ORCID: https://orcid.org/0000-0002-9394-7564)
- Rongrong Peng
- Jinping Chen (ORCID: https://orcid.org/0009-0006-7603-1008)
- Hu Rui
- Yi Li (ORCID: https://orcid.org/0000-0002-4543-684X)
- Shuangqing Wang (ORCID: https://orcid.org/0000-0002-1671-218X)
- Yanqing Wu (ORCID: https://orcid.org/0000-0001-7684-892X)
- Yang Guo-qiang (ORCID: https://orcid.org/0009-0009-5577-3071)
- Tianjun Yu
Institutions
- Chinese Academy of Sciences (CN)
- Shanghai Advanced Research Institute (CN)
- Technical Institute of Physics and Chemistry (CN)
- University of Chinese Academy of Sciences (CN)
Publication Details
- Journal
- Industrial Chemistry and Materials
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5im00046g
- Citations
- 2
- Primary Topic
- Advancements in Photolithography Techniques
- Type
- article
- Field-Weighted Citation Impact
- 1.46
Funders
- National Natural Science Foundation of China
- Chinese Academy of Sciences