Enhancement‐Mode AlInGaN/GaN High‐Electron‐Mobility Transistor with p–i–n Junction and Recessed Gate

This study introduces an enhancement‐mode AlInGaN/GaN high‐electron‐mobility transistor (HEMT) featuring a p–i–n junction and a recessed gate structure (p–i–n‐HEMT). The enhancement‐mode operation is collectively achieved through the synergistic effects of the p–i–n junction and the recessed gate structure. By precisely controlling the thicknesses of the p‐GaN, i‐GaN, and n‐GaN layers, along with the doping concentration of the n‐GaN layer, both the conduction band profile at the p–i–n junction interface and the depletion layer width can be effectively modulated. Moreover, AlInGaN material, renowned for its superior spontaneous polarization properties, is strategically implemented in the barrier layer design. This distinctive characteristic facilitates the formation of a 2D electron gas with substantially higher carrier density, thereby significantly enhancing the current‐carrying capacity and overall output performance. At this optimized operating condition, p–i–n‐HEMT demonstrates a remarkable saturation current density of 2278.4 mA mm −1 , representing a significant 25.6% enhancement compared to conventional HEMT structures. Furthermore, the device exhibits a remarkably low on‐resistance ( R on ) of 4.85 Ω·mm, representing a substantial improvement over conventional HEMT. These results demonstrate the tremendous potential of the proposed structure for high‐power electronic applications, particularly in next‐generation power conversion systems.