Resonant Tunneling Phenomena in Gate Controlled Chiral Graphene Nanoribbon

In this paper, the prospective of chiral graphene nanoribbons (chGNR) in FET-like devices is explored. Additionally, the emergence of tunneling resonance modes in this type of structure and their dependence on various factors are also investigated. This study used non-equilibrium Green’s function (NEGF) method along with Bloch Hamiltonian to analyze these characteristics of chGNRs. Quite significant on-off current ratios were found for chGNRs with some bandgap available. Other chGNRs with very little to no bandgap also demonstrated some response to gate voltage due to zero transmittance resulting from a mismatch between wavefunctions of electrons and holes in the channel and leads. Tunneling resonance modes were found, and they displayed dependence on the ribbon width and applied gate voltage.