Numerical analysis of the effects of various electron transport layers on CsSnGeI₃-based perovskite solar cell

Freshly, perovskite solar cells have drawn attention because of their high efficiency, accessible manufacturing costs, and potential to outperform traditional silicon-based solar cells. Outstanding aspects of Cesium(Cs) built solar conquered attention in the area of optoelectronics. During this analysis, the impact of various electron transport layers $\left(\mathrm{SnO}_{2}, \mathrm{Ag}_{2} \mathrm{~S}\right)$ on device structure is thoroughly investigated using CsSnGeI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> as absorber layer and GaAs used as HTL because of their unique properties like high hole transportability and excellent band alignment. Our motto is to increase the ability of solar cell devices by changing the specific characteristics of the devices, including the metal functioning function of the back electrode and the thickness and density of the deficiency of the absorption layer. Additionally, the effect of temperature and minority carriers on various device structures has been illustrated to see how these factors affect the device’s performance. The numerical simulation is performed with the simulating software SCAPS 1D. After optimizing numerous device parameters, the device with SnO<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> as ETL outperformed other ETL devices in terms of PV parameters, with the highest PCE of $27.23 \%$, Voc of 1.17 V, Jsc of $23.3 \mathrm{~mA} / \mathrm{cm}^{2}$ and FF of $88.7 \%$. This study highlights the promising role of CsSnGeI<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</inf>-based solar cells in advancing renewable energy solutions to enhance performance.