Novel Ultrafast Non-Destructive Readout of FeRAM by Low-Voltage Transient Current

Conventional FeRAM readout methods are destructive, requiring polarization switching of the FE capacitor (FeCAP) and write-back, which reduces endurance, increases latency, and energy consumption. Prior works on non-destructive readout (NDRO) relied on capacitance memory window (MW), which is slow and requires asymmetric FeCAP structure, compromising retention and increasing circuit complexity. Here, we present a novel NDRO method utilizing ultrafast transient response which applies to both symmetric and asymmetric structures. We experimentally demonstrate sub-ns read operations without altering the polarization state, achieving >10<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">13</sup> read cycles (limited by test time). This structure-agnostic method improves retention (tested at 125°C), endurance, and simplifies implementation, thus paving the way for fast, energy-efficient FeRAM-based solutions.