On the Challenges of Open-Block Reads in 3D NAND
As NAND flash memory scales and block sizes increase, issues related to reading partially-programmed blocks become more significant. Two concerns of especial significance for such open blocks (OB) are higher ICC during read, and worse reliability degradation due to read disturb (RD). This paper explores these phenomena and presents a novel method to detect and manage them.
Authors
- H. CHIN
- Dong‐Il Moon (ORCID: https://orcid.org/0000-0001-8292-1978)
- C.-F. Chen
- J.S. Yuan (ORCID: https://orcid.org/0000-0002-2548-8327)
- Albert Chen (ORCID: https://orcid.org/0000-0003-3708-3332)
- Zhenni Wan
Publication Details
- Published
- 2025-05-18
- DOI
- https://doi.org/10.1109/imw61990.2025.11026944
- Primary Topic
- Advanced Data Storage Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00