Evaluation of Electrical Characteristics of 180 nm Hf_0.5Zr_0.5O₂ based optimized Ferroelectric Field Effect Transistor

Analogous to field effect transistor devices, the Ferroelectric FETs (FEFETs) utilize a ferroelectric material as the gate dielectric. This allows for improved electrical characteristics and non-volatile memory applications, i.e., the state whether the transistor is on or off (1 or 0) is preserved even if the power is removed. Hafnium and doped Hafnia-based FEFETs show excellence as low-power, high-speed memory devices. HZO ferroelectric (y-axis) is usually made by doping HZO with different kinds of elements (such as lanthanum: La, or aluminum: Al) (x-axis) or by strain HZO (z-axis). In this paper, the oxide and FE layer thicknesses have been varied to obtain optimized device performances in terms of drain current and threshold voltage. Also, the threshold voltage, drain current, C-V, and switching characteristics of NMOS and the optimized N-FEFET are compared to show the superiority of the latter.