Reliability and Accuracy of a Qualified Split-Gate Flash In-Memory Compute Technology
A 28 nm split-gate flash in-memory compute technology is evaluated for reliability and accuracy. SST’s Embedded SuperFlash<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">®</sup>, ESF3, memory cell developed for analog compute shows low inference loss and < 2.5% cell distribution widening following 1000 hours high temperature life stresses and endurance cycling. Subthreshold cell current operation of the cell has good immunity to both write and read disturbs.
Authors
- Steven Lemke
- Louisa Schneider
- Zonglin Li (ORCID: https://orcid.org/0000-0002-4181-310X)
- Nhan Do
Institutions
- Microchip Technology (United States) (US)
Publication Details
- Published
- 2025-05-18
- DOI
- https://doi.org/10.1109/imw61990.2025.11026988
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00