Simulation of Ge-rich PCM Device Material Evolution from Post-Deposition Anneal to Programming Operations

Embedded Phase Change Memory (ePCM) with Ge-rich GST materials have shown to be a viable and reliable alternative to eFlash, being compliant with the harsh requirements of the automotive profile. The understanding of material changes during the lifetime of the device is fundamental to drive further technological improvements. In this work a simulation framework able to qualitatively reproduce material evolution from post-deposition crystallization to memory operation is presented. The results, validated by comparison with EELS images and electrical data, show excellent adherence, consolidating the understanding of element segregation in Ge-rich ePCM devices