Extraction of the Thermal Resistance of 1-mm Gate Periphery GaN-on-SiC RF HEMT

This paper offers an in-depth analysis of selfheating modeling in $1-\mathrm{mm}$ GaN-on-SiC high electron mobility transistors (HEMTs). Direct (DC) current-voltage (I-V) and short pulse I-V measurements examine the device’s behaviour. Four methods are applied to assess self-heating thermal resistance and channel temperature, providing efficient strategies that minimize the required measurements for accurate evaluation at various ambient temperatures. The results are validated by comparing them with GaN HEMTs from previous studies, shedding light on the thermal characteristics of GaN/SiC HEMT technology. These findings enhance understanding of self-heating effects, which is essential for improving the performance and reliability of GaN-based devices in high-power applications.