Demonstration of Conformal MoS<sub>2</sub> on High-Aspect-Ratio Structures up to 40:1 and Exploration of Manufacturability in a 300mm Fab for 3D NAND applications

This work presents the development of 2D material channels using MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for vertical device architecture and explores their manufacturability in a 300mm fab. We demonstrate conformal ALD MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> deposition on structure with high aspect ratio up to 40:1 and develop key downstream unit processes, including atomic-level precision etching, gentle deposition of metal contact, and delamination-free metal CMP on 2D materials. Utilizing an approximate 3D NAND structure with vertical macaroni channels, functional contact formation to the MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel is demonstrated with electrical data.

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Published
2025-05-18
DOI
https://doi.org/10.1109/imw61990.2025.11026929
Primary Topic
2D Materials and Applications
Type
article
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article

Demonstration of Conformal MoS2 on High-Aspect-Ratio Structures up to 40:1 and Exploration of Manufacturability in a 300mm Fab for 3D NAND applications

Kam‐Fai Wong, Srinivas Nemani, Ellie Yieh, C. W. Wong et al.
2D Materials and Applications
article

Demonstration of Conformal MoS2 on High-Aspect-Ratio Structures up to 40:1 and Exploration of Manufacturability in a 300mm Fab for 3D NAND applications

Kam‐Fai Wong, Srinivas Nemani, Ellie Yieh, C. W. Wong, Pei Liu, D. Yang, Mahendra Pakala, Minrui Yu, Arvind Kumar, Yi‐Hsuan Hsiao, Jeng‐Tzong Chen, Lavinia Nistor, L. Thomas, Ming‐Hui Chiu, Gaurav Bajaj, Meng Xin, Hongwen Zhou, Hao‐Ling Tang, M. Frei, Jason Appell
article en

Abstract

This work presents the development of 2D material channels using MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> for vertical device architecture and explores their manufacturability in a 300mm fab. We demonstrate conformal ALD MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> deposition on structure with high aspect ratio up to 40:1 and develop key downstream unit processes, including atomic-level precision etching, gentle deposition of metal contact, and delamination-free metal CMP on 2D materials. Utilizing an approximate 3D NAND structure with vertical macaroni channels, functional contact formation to the MoS<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> channel is demonstrated with electrical data.

Applied Materials (United States) (US)
Openalex Percentile: Top 91%
2D Materials and Applications
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