A novel Hybrid-Collector Tunneling IGBT With Enhanced Operating Temperature

In this work, a novel Hybrid-Collector Tunneling IGBT (HCT-IGBT) structure is designed and investigated by TCAD simulation. With an integrated N-well region within the P-type collector and an extra N-type heavily doped tunneling layer under the field stop layer, HCT-IGBT effectively reduces the current amplification factor of the internal parasitic PNP transistor (composed of base, drift, and collector region). Thus, further significantly lowers the off-state leakage current of the device and enables an elevation of maximum operating temperature. Simulation results show that the leakage current of HCT-IGBT at 175∘C and 200∘C is reduced by 38% and 42% compared to conventional Carrier Stored Trench-Gate Bipolar Transistor (CSTBT). As a result, the maximum operating temperature can be significantly increased, which greatly improves the output power. Furthermore, HCT-IGBT exhibits comparable on-state voltage drop (Von) and switching losses (Eon, Eoff) to CSTBT, demonstrating that there is no degradation in the device’s conduction and switching performance. These breakthroughs position the HCT-IGBT as a promising candidate for next-generation high-temperature power electronics.