Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pathways for future improvement. Key laser parameters such as the D-factor, the K-factor, the differential gain and the gain compression factor are extracted. Recombination coefficients and carrier escape times are determined by taking the effective carrier capture times derived from the small-signal modulation response. Additionally, the impact of the nano-ridge box size on the recombination coefficients is evaluated, highlighting the role of structural design in optimizing device performance and reliability.

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Publication Details

Journal
Optics Express
Published
2025-06-13
DOI
https://doi.org/10.1364/oe.566045
Primary Topic
Semiconductor Quantum Structures and Devices
Type
article
Field-Weighted Citation Impact
0.00

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article

Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

Dries Van Thourhout, Marina Baryshnikova, Charles Caër, Geert Morthier et al.
Optics Express
Semiconductor Quantum Structures and Devices
article

Advanced characterization and parameter extraction of electrically injected InGaAs/GaAs nano-ridge lasers monolithically integrated on silicon

Dries Van Thourhout, Marina Baryshnikova, Charles Caër, Geert Morthier, Yannick De Koninck, Davide Colucci, Peter Verheyen, Bernardette Kunert, Didit Yudistira, Hüseyin Şar, Joris Van Campenhout, Andualem Yimam
article en

Abstract

The static and dynamic characteristics of electrically injected monolithic nano-ridge lasers emitting around the wavelength of 1030 nm are comprehensively investigated, providing critical insights into their performance and identifying pathways for future improvement. Key laser parameters such as the D-factor, the K-factor, the differential gain and the gain compression factor are extracted. Recombination coefficients and carrier escape times are determined by taking the effective carrier capture times derived from the small-signal modulation response. Additionally, the impact of the nano-ridge box size on the recombination coefficients is evaluated, highlighting the role of structural design in optimizing device performance and reliability.

Optics ExpressVol. 33(13)
Roskilde University (DK), Nvidia (United Kingdom) (GB), Swiss Center for Electronics and Microtechnology (Switzerland) (CH), Roskilde Sygehus (DK), Ghent University (BE), IMEC (BE), Nvidia (United States) (US)
Horizon 2020 Framework Programme, H2020 Excellent Science, Interreg, HORIZON EUROPE Excellent Science
Openalex Percentile: Top 90%
Semiconductor Quantum Structures and Devices
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