Solution-processed p-type Cu <sub> <i>x</i> </sub> S hole injection layers for quantum dot light-emitting diodes
A molecular-based precursor solution method is used to fabricate p-type Cu x S hole injection layers. QLEDs based on Cu x S thin films with an external quantum efficiency of 16.63% are achieved.
Authors
- Mengxin Liu (ORCID: https://orcid.org/0000-0003-2756-9021)
- Daocheng Pan (ORCID: https://orcid.org/0000-0002-8273-6331)
- Xinan Shi (ORCID: https://orcid.org/0009-0005-2214-7614)
- Wei Shao (ORCID: https://orcid.org/0000-0002-8248-869X)
Institutions
- Guangxi University (CN)
Publication Details
- Journal
- New Journal of Chemistry
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5nj01634g
- Primary Topic
- Quantum Dots Synthesis And Properties
- Type
- article
- Field-Weighted Citation Impact
- 0.00