Nitride ferroelectric films deposited in capacitor structures for high-temperature memory

Approach highlights methods for using lower-cost molybdenum electrodes and the impact of oxygen on impeding electrical pathways.

Authors

Adam Liebendorfer (ORCID: https://orcid.org/0000-0003-0024-2010)

Publication Details

Journal: Scilight
Published: 2025-06-11
DOI: https://doi.org/10.1063/10.0036924
Primary Topic: Ferroelectric and Piezoelectric Materials
Type: article
Field-Weighted Citation Impact: 0.00

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article

Nitride ferroelectric films deposited in capacitor structures for high-temperature memory

Adam Liebendorfer

Jun 11, 2025

Scilight

Ferroelectric and Piezoelectric Materials

article

Nitride ferroelectric films deposited in capacitor structures for high-temperature memory

Adam Liebendorfer

June 11, 2025article en

Abstract

Approach highlights methods for using lower-cost molybdenum electrodes and the impact of oxygen on impeding electrical pathways.

ScilightVol. 2025(24)

Openalex Percentile: Top 91%

Ferroelectric and Piezoelectric Materials

DOI Open Access PDF OpenAlex

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Nitride ferroelectric films deposited in capacitor structures for high-temperature memory — Adam Liebendorfer · Scilight (2025) | TGRS Research Map | TGRS