A five-terminal ITO transistor enabling memory, artificial synaptic behaviors, and logic operations

The increasing complexity of fabrication and high transistor density is slowing down progress in integrated circuits. Simplified designs are now critical to boost circuit performance while reducing manufacturing challenges. Meanwhile, ITO (Indium Tin Oxide)-based devices have recently gained attention due to their good mobility and large-scale availability. However, multifunctional ITO-based transistors combining memory, logic gates, and artificial synaptic behaviors are rarely reported. Here, we propose a multifunctional five-terminal ITO-based transistor. By introducing a multi-electrode design, the device shows potential in addressing the limitations of traditional one-dimensional/two-dimensional control modes, effectively integrating logic operations and memory functions while simulating brain-like behaviors of artificial synaptic electronic devices. Experimental results demonstrate that multi-electrode cooperative regulation significantly enhances the programmability and dynamic flexibility of the device. A single transistor can perform the logic gate switching of traditional logic gate circuits (logic AND/OR gates), greatly simplifying the circuit structure. This work not only provides new insights into the efficient and low-power design of neuromorphic computing and artificial intelligence hardware but also offers innovative references for the application of multi-dimensional regulation devices in complex brain-like function simulations.

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Publication Details

Journal
The Journal of Chemical Physics
Published
2025-06-11
DOI
https://doi.org/10.1063/5.0270595
Citations
1
Primary Topic
Advanced Memory and Neural Computing
Type
article
Field-Weighted Citation Impact
0.73
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article

A five-terminal ITO transistor enabling memory, artificial synaptic behaviors, and logic operations

Sunan Tian, Bing Xue, Mingming Lv, Ji Xu
1 citations
The Journal of Chemical Physics
Advanced Memory and Neural Computing
0.73
article

A five-terminal ITO transistor enabling memory, artificial synaptic behaviors, and logic operations

Sunan Tian, Bing Xue, Mingming Lv, Ji Xu
article en
1 citations

Abstract

The increasing complexity of fabrication and high transistor density is slowing down progress in integrated circuits. Simplified designs are now critical to boost circuit performance while reducing manufacturing challenges. Meanwhile, ITO (Indium Tin Oxide)-based devices have recently gained attention due to their good mobility and large-scale availability. However, multifunctional ITO-based transistors combining memory, logic gates, and artificial synaptic behaviors are rarely reported. Here, we propose a multifunctional five-terminal ITO-based transistor. By introducing a multi-electrode design, the device shows potential in addressing the limitations of traditional one-dimensional/two-dimensional control modes, effectively integrating logic operations and memory functions while simulating brain-like behaviors of artificial synaptic electronic devices. Experimental results demonstrate that multi-electrode cooperative regulation significantly enhances the programmability and dynamic flexibility of the device. A single transistor can perform the logic gate switching of traditional logic gate circuits (logic AND/OR gates), greatly simplifying the circuit structure. This work not only provides new insights into the efficient and low-power design of neuromorphic computing and artificial intelligence hardware but also offers innovative references for the application of multi-dimensional regulation devices in complex brain-like function simulations.

The Journal of Chemical PhysicsVol. 162(22)
Ningbo University (CN), Chinese Academy of Sciences (CN), IMDEA Materials (ES), Institute of Process Engineering (CN), Ningbo Institute of Industrial Technology (CN)
Openalex Percentile: Top 27%
Advanced Memory and Neural Computing
0.73
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A five-terminal ITO transistor enabling memory, artificial synaptic behaviors, and logic operations — Sunan Tian, Bing Xue, et al. · The Journal of Chemical Physics (2025) | TGRS Research Map | TGRS