Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe2 quantum dots

We propose a spin-charge qubit based on a bilayer graphene and WSe<sub>2</sub> van der Waals heterostructure that together form a quantum dot and demonstrate its functionality from first-principles simulations. Electron and hole confinement as well as electrically controllable spin-orbit coupling (SOC) are modeled by self-consistently solving the Schrödinger and Poisson equations with material parameters extracted from density functional theory as inputs. In both electron and hole quantum dots, we find a two orders of magnitude enhancement of SOC (1.8 meV) compared to intrinsic graphene, in the layer directly adjacent to WSe<sub>2</sub>. Time-dependent investigations of the quantum device reveal rapid qubit gate operation in the order of picoseconds. Our simulations indicate that bilayer graphene and WSe<sub>2</sub> heterostructures provide a promising platform for the processing of quantum information.

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Publication Details

Journal
npj 2D Materials and Applications
Published
2025-06-11
DOI
https://doi.org/10.1038/s41699-025-00568-y
Primary Topic
Quantum and electron transport phenomena
Type
article
Field-Weighted Citation Impact
0.00

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article

Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe2 quantum dots

H. Ge, Mathieu Luisier, O. Schmidt, Jiang Cao et al.
npj 2D Materials and Applications
Quantum and electron transport phenomena
article

Ab initio simulation of spin-charge qubits based on bilayer graphene-WSe2 quantum dots

H. Ge, Mathieu Luisier, O. Schmidt, Jiang Cao, Mauro Dossena, Ilan Bouquet, Peter Koopmann, Filip Mrcarica
article en

Abstract

We propose a spin-charge qubit based on a bilayer graphene and WSe<sub>2</sub> van der Waals heterostructure that together form a quantum dot and demonstrate its functionality from first-principles simulations. Electron and hole confinement as well as electrically controllable spin-orbit coupling (SOC) are modeled by self-consistently solving the Schrödinger and Poisson equations with material parameters extracted from density functional theory as inputs. In both electron and hole quantum dots, we find a two orders of magnitude enhancement of SOC (1.8 meV) compared to intrinsic graphene, in the layer directly adjacent to WSe<sub>2</sub>. Time-dependent investigations of the quantum device reveal rapid qubit gate operation in the order of picoseconds. Our simulations indicate that bilayer graphene and WSe<sub>2</sub> heterostructures provide a promising platform for the processing of quantum information.

npj 2D Materials and ApplicationsVol. 9(1)
ETH Zurich (CH)
Schweizerischer Nationalfonds zur Förderung der Wissenschaftlichen Forschung, Centro Svizzero di Calcolo Scientifico
Openalex Percentile: Top 90%
Quantum and electron transport phenomena
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