Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation

Transition metal dichalcogenides (TMDCs) hold significant promise in constructing next-generation high-performance electronic devices, potentially extending Moore's law and enabling the realization of three-dimensional integrated circuit architectures. However, realizing this potential depends critically on developing a reliable method to transfer TMDCs from a growth substrate to desirable surfaces. Here, we report a dry-transfer strategy of liquid nitrogen-assisted cryogenic exfoliation to achieve large-scale and superclean transfer of TMDCs. Benefited from the synergistic effect of liquid nitrogen-induced exfoliation and protection of hafnium oxide, the transferred TMDCs are free from polymer residues and show excellent electrical property, and taking n-type single-crystal molybdenum disulfide as a demonstration, the transferred TMDC exhibits high carrier mobility up to 38.4 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Moreover, this transfer method shows versatile capabilities in transferring monolayer and multilayer TMDCs and constructing bi- and trilayer heterostructures. Therefore, our proposed transfer methodology promises the integration of TMDCs into future, ultimately scaled-down, electronic device technologies.

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Publication Details

Journal
Nano Letters
Published
2025-06-11
DOI
https://doi.org/10.1021/acs.nanolett.5c01548
Citations
8
Primary Topic
3D IC and TSV technologies
Type
article
Field-Weighted Citation Impact
5.84

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article

Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation

Yafei Ning, Gengchang Zhu, Yu Sun, Klaus Leifer et al.
8 citations
Nano Letters
3D IC and TSV technologies
5.84
article

Large-Scale and Ultraclean Dry Transfer of Two-Dimensional Materials via Liquid Nitrogen-Assisted Cryogenic Exfoliation

Yafei Ning, Gengchang Zhu, Yu Sun, Klaus Leifer, Sabeen Fatima, Ziheng Li, Aimin M. Song, Safia Khan, Hu Li, Lei Han, Xiaoxiao Zheng
article en
8 citations

Abstract

Transition metal dichalcogenides (TMDCs) hold significant promise in constructing next-generation high-performance electronic devices, potentially extending Moore's law and enabling the realization of three-dimensional integrated circuit architectures. However, realizing this potential depends critically on developing a reliable method to transfer TMDCs from a growth substrate to desirable surfaces. Here, we report a dry-transfer strategy of liquid nitrogen-assisted cryogenic exfoliation to achieve large-scale and superclean transfer of TMDCs. Benefited from the synergistic effect of liquid nitrogen-induced exfoliation and protection of hafnium oxide, the transferred TMDCs are free from polymer residues and show excellent electrical property, and taking n-type single-crystal molybdenum disulfide as a demonstration, the transferred TMDC exhibits high carrier mobility up to 38.4 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>. Moreover, this transfer method shows versatile capabilities in transferring monolayer and multilayer TMDCs and constructing bi- and trilayer heterostructures. Therefore, our proposed transfer methodology promises the integration of TMDCs into future, ultimately scaled-down, electronic device technologies.

Nano LettersVol. 25(25)
Shandong University of Technology (CN), Uppsala University (SE), Shandong University (CN), Center for NanoScience (DE), University of Manchester (GB), Southern University of Science and Technology (CN), City University of Hong Kong, Shenzhen Research Institute (CN), Technology Centre Prague (CZ)
Royal Society, National Natural Science Foundation of China, Natural Science Foundation of Shandong Province, Shenzhen Fundamental Research Program, Key Technology Research and Development Program of Shandong, National Key Research and Development Program of China, Shandong Provincial Postdoctoral Science Foundation, Basic and Applied Basic Research Foundation of Guangdong Province
Openalex Percentile: Top 4%
3D IC and TSV technologies
5.84
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