Impact of Technology Node on Soft Error Sensitivity of Flip-Flops and Srams in St Bcd Technology
In this work, we explore and compare ST BCD technology platform robustness against soft errors induced by alpha particles, neutrons and heavy-ions on both Flip-Flops and SRAMs ranging from the available 110 nm node up to the most advanced and under development 40 nm node.
Authors
- Carlo Cazzaniga (ORCID: https://orcid.org/0000-0002-3110-0253)
- D. Crippa
- A. Veggetti
- Simone Gerardin (ORCID: https://orcid.org/0000-0002-1260-0586)
- A. Benfante
- Marta Bagatin (ORCID: https://orcid.org/0000-0003-2779-3461)
- Abhishek Jain (ORCID: https://orcid.org/0000-0002-4176-5339)
Institutions
- Rutherford Appleton Laboratory (GB)
- University of Padua (IT)
- STMicroelectronics (India) (IN)
- STMicroelectronics (Italy) (IT)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/radecs61975.2024.11017567
- Primary Topic
- Silicon and Solar Cell Technologies
- Type
- article
- Field-Weighted Citation Impact
- 0.00