Data Pattern Dependence of the Total Ionizing Dose Effect in 3D Nand Flash Memories
The total ionizing dose effect (TID) is one of radiation effects that must semiconductor chips for outer space use. We have evaluated the TID characteristics for each data pattern in triple level cell (TLC) floating-gate and charge-trap NAND flash memories. Gamma-ray irradiation measurements showed that the TID characteristics of the charge-trap type depend more on the data pattern than those of the floating-gate type. The chargetrap type has high TID tolerance for data patterns with small cell threshold voltages shifts, but the tolerance significantly decreases as the threshold voltage increases.
Authors
- Kazutoshi Kobayashi (ORCID: https://orcid.org/0000-0002-7139-7274)
- Jun Furuta (ORCID: https://orcid.org/0000-0003-0146-3077)
- Taiki Ozawa
Institutions
- Okayama Prefectural University (JP)
- Kyoto Institute of Technology (JP)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/radecs61975.2024.11017552
- Primary Topic
- Advanced Memory and Neural Computing
- Type
- article
- Field-Weighted Citation Impact
- 0.00