Effects of Proton and Gamma Radiation on DDR4 SDRAM in Elevated Temperature
This paper shows that various types of soft errors such as SBU, SEFI and SEL occurs in DDR4 SDRAMs using cutting edge technology node due to proton radiation in hot temperature. The failure rate by error types were compared between manufacturers. Some of SBU did not recover even after radiation was stopped. It was confirmed that the refresh characteristics of most DRAM cells were deteriorated due to radiation.
Authors
- Sang-Soon Young
- Seungjoo Woo
- Joongsik Kih (ORCID: https://orcid.org/0000-0002-9900-9923)
- Youngboo Kim (ORCID: https://orcid.org/0000-0003-0308-6383)
- Dongwoo Bae
- Sung Chung
- Saqib Khan (ORCID: https://orcid.org/0000-0001-6101-0892)
- H.C. Kim
- Kiseog Kim
- W. Kim
- Daeyong Eom
- Jeong-Soo Kim
- Seung Woo Son (ORCID: https://orcid.org/0000-0001-8922-418X)
Institutions
- Korea Aerospace Research Institute (KR)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/radecs61975.2024.11017557
- Citations
- 1
- Primary Topic
- Nuclear Physics and Applications
- Type
- article
- Field-Weighted Citation Impact
- 0.61