Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide

The ESA project<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup><sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>European Space Agency contract number 4000132931/20/NL/FE “Assessment of Advanced NonVolatile Memories” is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis and literature review have been conducted and Ferroelectric Hafnium-Oxid FET (FeFET) has been selected as very promising technology. Thereof, a prototype memory IC has been designed and manufactured that underwent functional, thermal and radiation testing. In summary, the goals of the de-risk activity have been achieved and the feasibility of utilizing FeFET technology in space environment has been demonstrated. This NVM technology will be well suited for future applications as companion memory to processors or comparable.

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Published
2024-09-19
DOI
https://doi.org/10.1109/radecs61975.2024.11017569
Primary Topic
Semiconductor materials and devices
Type
article
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article

Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide

Viktor Havel, Stefan Slesazeck, Michael Steffens, Markus Plattner
Semiconductor materials and devices
article

Assessment of Advanced Non-Volatile Fefet Memories Based on Hafnium-Oxide

Viktor Havel, Stefan Slesazeck, Michael Steffens, Markus Plattner
article en

Abstract

The ESA project<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup><sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">1</sup>European Space Agency contract number 4000132931/20/NL/FE “Assessment of Advanced NonVolatile Memories” is about the identification and evaluation of emerging non-volatile memory technology for future missions. A detailed market analysis and literature review have been conducted and Ferroelectric Hafnium-Oxid FET (FeFET) has been selected as very promising technology. Thereof, a prototype memory IC has been designed and manufactured that underwent functional, thermal and radiation testing. In summary, the goals of the de-risk activity have been achieved and the feasibility of utilizing FeFET technology in space environment has been demonstrated. This NVM technology will be well suited for future applications as companion memory to processors or comparable.

Fraunhofer Institute for Technological Trend Analysis (DE), NaMLab (Germany) (DE)
Openalex Percentile: Top 72%
Semiconductor materials and devices
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