Nor-Flash Memories Under Protons and Neutrons
Commercial NOR-Flash memories were written with several patterns at different bias voltages and irradiated with protons and neutrons in order to know the effect of the bias voltage on the single event cross sections. No conclusive related results were found, but weird single event functional interrupts were observed.
Authors
- Jan Štursa (ORCID: https://orcid.org/0000-0002-2998-7000)
- Václav Zach
- Hortensia Mecha (ORCID: https://orcid.org/0000-0002-9774-4609)
- Mohammadreza Rezaei (ORCID: https://orcid.org/0000-0002-0442-5589)
- Juan Carlos Fabero (ORCID: https://orcid.org/0000-0003-4977-9556)
- A. Colangeli (ORCID: https://orcid.org/0000-0003-4487-1927)
- Francisco J. Franco (ORCID: https://orcid.org/0000-0003-1509-5201)
- Juan Antonio Clemente (ORCID: https://orcid.org/0000-0002-7855-1051)
- Eva Fortún
- Marcos Motino
Institutions
- National Agency for New Technologies, Energy and Sustainable Economic Development (IT)
- Universidad Complutense de Madrid (ES)
- Czech Academy of Sciences, Nuclear Physics Institute (CZ)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/radecs61975.2024.11017556
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00