Radiation Evaluation of a Dual D-Type Flip-Flop with Triple Modular Redundancy
Single Events Effect (SEE) characterization results for a Dual D-Type Flip-Flop with Triple Modular Redundancy is summarized, showing very robust SEE performance up to LET<inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">EFF</inf>=75 MeV-cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>/mg. A comparison is made between a device with TMR (Triple Modular Redundancy) & a device without TMR to showcase the SEE performance differences.
Authors
- M. Violante (ORCID: https://orcid.org/0000-0002-5821-3418)
Publication Details
- Published
- 2024-09-19
- DOI
- https://doi.org/10.1109/radecs61975.2024.11017534
- Primary Topic
- Radiation Effects in Electronics
- Type
- article
- Field-Weighted Citation Impact
- 0.00