Manipulating the FMR Frequency of YIG Nanostrips With Exchange Bias

Microwave ferrite devices are now widely utilized across various scenarios, often requiring the application of an external bias field to manipulate their operational frequency. As ferrite devices continue to shrink in size, there is increasing interest in leveraging the exchange bias effect to regulate frequency within a smaller volume. In the study, our research focus on exploring an optimum method that manipulating the ferromagnetic resonance (FMR) frequency of thin YIG/IrMn bilayer nanostrips. Through theoretical analysis and simulations, our model demonstrates the successful adjustability of YIG film’s FMR frequency from 0 GHz to 30 GHz, which offering valuable insights for designing miniaturized, frequency-adjustable microwave ferrite devices.