Gradient-coated P-doped Si <sub>3</sub> N <sub>4</sub> with dual functions for silicon anodes: stress buffering and charge transport enhancement
A tough act to coat! We design a P-doped Si 3 N 4 layer on Si particles that forms a robust and conductive shield. Combined with a carbon layer, the material shows high capacities in different tests. The image shows our synergy enabling the improvement.
Authors
- Yongping Zheng (ORCID: https://orcid.org/0000-0002-8745-2645)
- Bin Yu (ORCID: https://orcid.org/0000-0002-4978-362X)
- Zhigao Huang (ORCID: https://orcid.org/0000-0002-8157-3550)
- Jiaxin Li (ORCID: https://orcid.org/0000-0003-1025-2036)
- Yi Zhong (ORCID: https://orcid.org/0000-0002-2119-0451)
- Yajing Huang (ORCID: https://orcid.org/0000-0003-1233-0851)
- Lanqing Xu
Institutions
- Fujian Normal University (CN)
Publication Details
- Journal
- Sustainable Energy & Fuels
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5se00347d
- Primary Topic
- Semiconductor materials and devices
- Type
- article
- Field-Weighted Citation Impact
- 0.00