Optoelectronic reconfigurable 1T-VSe2/2H-MoTe2 Schottky junction for near-infrared switchable logic

Reconfigurable devices play a crucial role in the development of silicon semiconductor technology. However, there remains an urgent necessity to develop reconfigurable devices that are simpler to manufacture and provide a broader range of functions. Herein, we have fabricated an all-two-dimensional (2D) reconfigurable Schottky junction by artificially stacking metallic 1T phase VSe2 and semiconducting 2H phase MoTe2. Leveraging the adjustment of band bending of the ambipolar material MoTe2 by gate voltage, the device achieved reversibly switchable carrier polarity type and gate-tunable rectification ratio ranging from 102 to 10−3. Correspondingly, the device shows obvious bidirectional photoresponse by changing gate voltage from −60 V to 60 V under 1064 nm illumination. Based on its excellent switchable photoresponse, we have constructed an optoelectronic logic device that can achieve photoelectric logic function switching. This work indicates the important role of all-2D Schottky junctions in reconfigurable logic optoelectronic devices. Reconfigurable devices are essential for advancing silicon semiconductor technology, yet simpler manufacturing and expanded functionality are needed. Here, the authors fabricate an all-2D reconfigurable Schottky junction, achieving reversibly switchable carrier polarity and gate-tunable rectification, thereby paving the way for an innovative optoelectronic device that can perform photoelectric logic function switching.