Buried Interface Modification Strategy for Efficient Tin‐Based Perovskite Light‐Emitting Diodes

Abstract Tin (Sn)‐based perovskites show great potential for environmentally friendly and high‐performance light‐emitting diodes (LEDs). However, the development of Sn‐based perovskite LEDs (PeLEDs) lags significantly behind that of lead‐based perovskites. This is mainly due to the faster crystallization rate of Sn‐based perovskites that leads to a higher defect density in Sn‐based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn‐based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn‐based perovskite films. As a result, efficient near‐infrared Sn‐based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high‐performance Sn‐based perovskite films and devices.

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Publication Details

Journal
Angewandte Chemie
Published
2025-06-11
DOI
https://doi.org/10.1002/ange.202507914
Citations
2
Primary Topic
Perovskite Materials and Applications
Type
article
Field-Weighted Citation Impact
1.46

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article

Buried Interface Modification Strategy for Efficient Tin‐Based Perovskite Light‐Emitting Diodes

Weidong Xu, Yangyu Liu, Sai Bai, Chunxiong Bao et al.
2 citations
Angewandte Chemie
Perovskite Materials and Applications
1.46
article

Buried Interface Modification Strategy for Efficient Tin‐Based Perovskite Light‐Emitting Diodes

Weidong Xu, Yangyu Liu, Sai Bai, Chunxiong Bao, Wei Wang, Xiaodong Shen, Wing Chung Tsoi, Ya Zhong, Hongyao Ding, Wenbin Wang, Changyuan Yu, Zheng Jiang, Jing Xu, Jie Yang, Haifeng Zhao, Yuhan Zhou, Pengpeng Teng
article en
2 citations

Abstract

Abstract Tin (Sn)‐based perovskites show great potential for environmentally friendly and high‐performance light‐emitting diodes (LEDs). However, the development of Sn‐based perovskite LEDs (PeLEDs) lags significantly behind that of lead‐based perovskites. This is mainly due to the faster crystallization rate of Sn‐based perovskites that leads to a higher defect density in Sn‐based perovskite films, thereby serious nonradiative recombination. Here, we demonstrated a buried interface modification (BIM) strategy to regulate the crystallization kinetics of Sn‐based perovskite films by using carboxylate as multifunctional surface modifiers. We reveal that the buried interface is critical to improve the nucleation and crystallization of Sn‐based perovskite films. As a result, efficient near‐infrared Sn‐based PeLEDs were achieved with an external quantum efficiency (EQE) of 11.9%. This work suggests an efficient and elegant route to obtain high‐performance Sn‐based perovskite films and devices.

Angewandte ChemieVol. 137(33)
Nanjing Tech University (CN), University of Electronic Science and Technology of China (CN), Northwestern Polytechnical University (CN), Swansea University (GB), Silicon Chemical (United States) (US), Division of Materials Science and Engineering (AU), Collaborative Innovation Center of Advanced Microstructures (CN), The Synergetic Innovation Center for Advanced Materials (CN), Nanjing University (CN)
National Natural Science Foundation of China, Natural Science Foundation of Jiangsu Province, Priority Academic Program Development of Jiangsu Higher Education Institutions, National Key Research and Development Program of China
Openalex Percentile: Top 17%
Perovskite Materials and Applications
1.46
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