First-principles understanding of hole mobility and intrinsic transport mechanisms in Sn( <scp>ii</scp> ) oxides
Transparent conducting oxides play a key role in optoelectronics, but high-mobility p-type materials remain rare. This work highlights Sn( ii ) oxides as promising candidates based on first-principles calculations.
Authors
- David O. Scanlon (ORCID: https://orcid.org/0000-0001-9174-8601)
- Geoffroy Hautier (ORCID: https://orcid.org/0000-0003-1754-2220)
- Romain Claes (ORCID: https://orcid.org/0009-0000-5746-7419)
- Gian‐Marco Rignanese (ORCID: https://orcid.org/0000-0002-1422-1205)
Institutions
- Dartmouth College (US)
- Northwestern Polytechnical University (CN)
- European Theoretical Spectroscopy Facility (BE)
- Walloon Excellence in Lifesciences and Biotechnology (BE)
- University of Birmingham (GB)
Publication Details
- Journal
- Journal of Materials Chemistry C
- Published
- 2025-01-01
- DOI
- https://doi.org/10.1039/d5tc01708d
- Primary Topic
- Electronic and Structural Properties of Oxides
- Type
- article
- Field-Weighted Citation Impact
- 0.00
Funders
- U.S. Department of Energy
- Government of the United Kingdom
- UK Research and Innovation
- Fonds De La Recherche Scientifique - FNRS
- Fédération Wallonie-Bruxelles
- Office of Science
- HORIZON EUROPE Framework Programme
- Engineering and Physical Sciences Research Council
- Basic Energy Sciences