pH Monitoring using BESOI MOSFET with different Sensing Regions

This work explores the sensing regions of BESOI MOSFETs working as pMOS for pH detection using TCAD Sentaurus numerical simulation. A novel approach was employed to model the electrolyte, addressing the simulator's prior lack of a model for this material type, based on existing literature. The simulation results show that the BESOI pMOS present an increase in drain current levels for basic pH values and a decrease for acidic pH values, which is the opposite of what occurs in the case of the BESOI nMOS, in the previous work. Additionally, the voltages applied to the programming gate and the electrolyte were evaluated, and they influenced sensitivity due to the electrostatic coupling of the transistor operating as a pMOSFET.